2N7002G-AE2-R 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: UTC(Unisonic Tech) 2N7002G-AE2-R
- Power Dissipation (Pd): 200mW
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 300mA
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 7.5Ω@300m,10V
- Package: SOT-23-3
- Manufacturer: UTC(Unisonic Tech)